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| Home >Technology> 0.13um |
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0.13um |
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| Hua Hong NEC's EF130 process (0.13um SONOS flash memory), is characterized by its excellent stability, high endurance, low power, radiation hardness, and is highly compatible with standard CMOS technologies. Compared with other Embedded NVM technologies, SONOS process can provide more cost-effective solutions for customers with its low mask adder, small cell size (SRAM: 1.896um2 NVM: 0.6192um2), excellent data retention of more than 10 years and endurance of more than 100k cycles. EF130 process also offers capacitors, high resistance poly resistors for designs that require mixed-signal components. It is one of the most popular Embedded Non-Volatile Memory platforms in applications for microprocessors, communications, consumer products, and smart cards. |
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Process Features |
| Isolation |
STI |
| Well Formation |
Retrograded well |
| Gate Formation |
N+ Poly |
| ILD |
PSG/CMP |
| Contact |
Ti/TiN/W-Plug |
| IMD |
TEOS-NSG/CMP |
| Via |
Ti/TiN/W-Plug |
| Metal |
AlCu/Ti/TiN |
| Passivation |
SiO2/SiN |
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| Device Performance |
| Parameter |
Unit |
Value |
| Vcc |
V |
1.8/5.0 |
| Tox (physical) |
A |
32/110 |
| Vt N/P |
V |
0.6996/-0.7813 |
| Idsat N/P |
uA/um |
500/-190 |
| Ioff N/P |
pA/um |
0.7/-12 |
| R.O. Delay |
pS/Stage |
NA |
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| Key Design Rule |
| Layer |
W/S |
| Diffusion |
0.14/0.27 |
| Poly |
0.15/0.21 |
| Contact 0 |
0.17/0.17 |
| Metal 0 |
0.14/0.14 |
| Contact 1 |
0.17/0.19 |
| Metal 1 |
0.14/0.14 |
| Via 1 |
0.15/0.17 |
| Metal 2 |
0.14/0.14 |
| Via2 |
0.28/0.28 |
| Metal 3 |
0.36/0.36 |
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